Abstract
The growth mode of Mn on Ag(100) in the monolayer range was studied using X-ray photoelectron diffraction (XPD), angle-resolved valence band photoemission and low energy electron diffraction. Our results show that MnAg intermixing takes place. The thickness of the intermixed films depends critically on the growth temperature. At room temperature the XPD data clearly indicate that Mn is located in the first and second topmost atomic layers. The growth at higher temperatures, i.e. for 1 ML deposited at 460 K, or 1 ML deposited at RT and then annealed at 460 K, results in enhanced interdiffusion and Ag segregation.
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