Abstract
The initial stages of Cu growth (up to 20 Å) on ordered Al2O3 ultrathin films (∼20 Å thick) synthesized on a Re(0001) substrate are studied by low-energy ion scattering (LEIS) and x-ray photoelectron spectroscopy (XPS). LEIS results indicate that Cu grows as three-dimensional clusters on the Al2O3 films at both 80 and 300 K. XPS results show decreases in the Cu 2p3/2 binding energy and increases in the Cu L3M4,5M4,5 kinetic energy as a function of coverage. Analysis of these results indicates that Cu is not oxidized at the interface. For the coverage-dependent shifts in the Cu 2p3/2 peaks, the initial-state and final-state contributions and their relation to Cu cluster size are discussed.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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