Abstract
The initial stages of Ag growth on both Sb-modified and As-terminated GaAs(001) surfaces are investigated by reflection high-energy electron diffraction (RHEED) and core-level photoelectron spectroscopy (PES). Sb atom segregation is detected on silver films grown on the Sb-modified surfaces, while substrate atom segregation is not detected on As-terminated surfaces. After thick silver growth, streaks perpendicular to the substrate are observed on the [ 11 0] RHEED pattern, which are not observed on the As-terminated surface. This suggests that surface flattening is induced by segregated Sb atoms bonding to silver atoms.
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