Abstract
Reconstructed surfaces on Sb/GaAs(001) have been investigated in situ by reflection high-energy electron diffraction (RHEED) and core-level photoelectron spectroscopy by heating a sample prepared by depositing Sb on an As-terminated GaAs(001) surface at room temperature (RT). Before Sb desorption, the halo RHEED pattern changes into 1×4, 1×3, and 2×4 patterns from RT to 560 o C, which is in contrast to Sb/GaAs(110) that shows only a 1×1 pattern. It is found that the GaAs surface with a 2×4 pattern is terminated by a monolayer of Sb, and that these superstructure changes are caused by As atom desorption followed by Sb atom substitution
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