Initial stage of nitridation on Si(1 0 0) surface using low-energy nitrogen ion implantation

Abstract

The initial stage of the thermal nitridation on Si (1 0 0)-2 × 1 surface with the low-energy nitrogen ion (200 eV) implantation was studied by photoemission spectroscopy (PES). The formation of nitride was shown the different characteristics depending on the annealing temperature. The disordered surface at room temperature was changed to 2 × 1 periodicity with the low-energy electron diffraction (LEED) as increasing the nitridation temperature. By decomposition of Si 2p spectrum, we can identify the three subnitrides (Si 1+, Si 2+, and Si 3+). By changing the take-off angle of the Si 2p, we can increase surface sensitivity and estimate that Si 1+, Si 2+ and Si 3+ are the interface states.