Abstract
The growth process in the initial stage of growth of Ge on (100)Si substrates by gas source molecular beam epitaxy using GeH4 has been investigated by in-situ reflection high-energy electron diffraction (RHEED) observation. It has been found that the growth mode is the Stranski-Krastanov type, and that the predominant facet of Ge islands is {811} planes at the first step of the island growth but changes to {311} planes with the growth.
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