Abstract
InGaAs films have been deposited on semi-insulating InxGa1−xAs (x=0.04–0.05) substrates with improved material properties compared to similar InGaAs films grown on GaAs substrates. For near lattice matched conditions the films grown on InGaAs substrates have a smooth surface morphology compared to a dislocation-induced cross hatch morphology on GaAs substrates. The resulting film double crystal x-ray linewidths are considerably narrower. The InGaAs film photoluminescence intensity is stronger with a narrower x-ray linewidth due to the elimination of lattice mismatch dislocations. Also the Hall mobilities are higher for the films grown on InGaAs substrates.
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