Abstract
The reaction of thin films of Ti with a Si substrate has been measured as a function of temperature using Auger electron and appearance potential spectroscopies. Intermixing of Si with the Ti begins below 250°C. However there is no evidence for silicide formation at this low temperature. Silicide layers of stable stoichiometry are observed in a range of temperatures around 400°C and around 650°C. The depth dependence of the appearance potential spectra confirms the formation of a Si-rich surface region during reaction.
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