Abstract
Inhomogeneous strain relaxation in quantum dots etched from biaxially strained quantum wells is calculated. Strain-induced band effects and piezoelectric potentials are discussed for several wires and dots (mainly II-VI systems, but results are generalized to other zinc-blende systems such as ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}/\mathrm{GaAs})$. General trends for varying design parameters of the nanostructures are given. Results are compared to data obtained from optical spectroscopy experiments. The case of a system under tensile strain that evidences an unexpected relaxation phenomenon is also discussed both experimentally and theoretically.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
