Abstract
We compare calculations which allow us to obtain strain fields in etched quantum wires (QWRs) and quantum dots (QDs) without making any simplifying assumption. Characteristic features about strain relaxation in QWRs and QDs are discussed versus wire or dot dimensions and illustrated with various II–VI nanostructures either under compressive or tensile strain. Band-gap energy shifts are then estimated according to the calculated strain fields and compared with experimental data.
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