Abstract
We systematically investigate the electrical and magnetic properties of n-type ferromagnetic semiconductor (In,Fe)As thin films grown on vicinal GaAs(001) substrates with different lattice-relaxation layers and Fe-doping techniques. We show that spinodal decomposition and ferromagnetism can be enhanced in the (In,Fe)As thin films grown on InAs lattice-relaxation layers under the nucleation growth mode, while they are suppressed in those grown on the GaSb/AlSb/AlAs (from top to bottom) lattice-relaxation layers under the step-flow growth mode. We demonstrate that room-temperature ferromagnetism and good electrical properties can be obtained at the same time by using the Fe-delta-doping technique in combination with the step-flow growth mode.
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