Abstract
We present the fabrication and experimental characterization of finite-area selectively-grown InGaAs/GaAs metalorganic chemical vapor deposition (MOCVD) quantum well wire (QWR) arrays. The wire patterns studied were obtained by high resolution electron beam lithography using PMMA and etching of SiO 2. Growth was performed by atmospheric pressure MOCVD in a vertical reactor configuration. We observed a large non-linear enhancement of growth inside the wire region. The inhomogeneity of fabricated QWR arrays was studied by spatially resolved photoluminescence.
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