Abstract
The surface morphology and incorporation behavior of heavily Te-doped GaAs were studied for various growth parameters by chemical beam epitaxy (CBE). The Te precursor, DIPTe (diisopropyl telluride), acts as a volatile dopant in the growth temperature range of 475–595°C. Electrical activation of Te is increased for lower growth temperatures. The Te surfactant effect was shown to lead to three-dimensional growth, which greatly affected the resulting surface morphology. We have shown that growth parameters can be tuned to reduce the Te surfactant effect through kinetic limitation, thus obtaining improved surface morphologies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have