Abstract
We have found that the copper dissolution rate in CO2-dissolved water (CO2 DIW) used as rinse water for wafer cleaning processes can be decreased to one-third by eliminating H2O2. DIW in semiconductor factories normally contains 10~40 μg/L H2O2, which remains also in CO2 DIW. We have developed a palladium-loaded monolithic anion exchange resin (Pd-M) as a catalyst that is able to remove H2O2 in DIW down to below 1 μg/L at extreamly high flow rate (space velocity SV = 6000 h-1), with no detectable elution of impurities.
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