Inhibition of charge packet broadening in GaAs charge-coupled devices

Abstract

Computer simulation of charge transport in GaAs resistive-gate charge-coupled devices is reported. The simulation has been performed for 10 μm finger spacings, doping concentrations in the range of 1×1016–1×1017 cm−3, effective channel thicknesses 0.1–1.0 μm, lateral applied fields 3–10 kV/cm, and charge packet sizes 5%–100% of full bucket capacity. Inhibition of charge packet broadening due to transferred electron effects has been observed. Charge transfer time of 99.9% charge transfer efficiency across the intermediate phase finger was investigated and found to decrease monotonically with increasing electric field despite the turnaround in average carrier velocity. This may be attributed to a combination of improved initial charge confinement and inhibition of charge packet broadening.