Abstract
An In–Ga–Zn–O (IGZO) memristor with double layers of different oxygen vacancy (VO) densities has been developed, and long-term memory towards neuromorphic applications has been confirmed. The IGZO layer of the higher VO density functions as a pseudo electrode to avoid the Schottky behavior, whereas that of the lower VO density functions as a conductance change layer. The long-term potentiation and long-term depression are observed based on the memristor characteristic by applying pulse voltages, which demonstrates the future possibility towards neuromorphic applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
