Abstract
AbstractAn InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, band‐1‐power class‐2 application. The HBT power amplifier demonstrates maximum output power Pout of 29.4 dBm and power‐added efficiency (PAE) of 48% at a frequency of 1.95 GHz. When operated according to the WCDMA standard, it achieves Pout of 27 dBm and PAE of 32.4%. The adjacent channel leakage power ratio (ACLR) is −33 dBc. A compact microstrip resonant cell (CMRC) circuit is implemented on the HBT amplifier in order to further improve the PAE, ACLR, and IM3 performances. This results in improvements of 8 dB and 6% for the ACLR and PAE, respectively. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 84–88, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20908
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