Abstract
An InGaP/GaAs heterojunction bipolar transistor (HBT) is developed. By using this HBT, a power amplifier is designed for WCDMA user equipment, band-1 power class-2 application. The HBT power amplifier demonstrates a maximum output power (Pout) of 29.4 dBm and a PAE of 48% at the frequency of 1.95 GHz. When it operates in the WCDMA standard, it achieves a Pout of 27 dBm and a PAE of 32.4%. The adjacent channel leakage power ratio (ACLR) is -33 dBc. To improve the PAE, ACLR and IM3 performance further, a CMRC (compact microstrip resonance cell) circuit has been implemented on the HBT amplifier. The effect of CMRC on PAE and ACLR is investigated using a low power HBT amplifier. The results show that the ACLR can be improved by the CMRC.
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