Abstract
In this work we have characterised InGaP/GaAs based heterojunction bipolar transistor (HBT) structures, fabricated by metalorganic chemical vapour phase epitaxy (MOVPE), using non-contact electro-optic spectroscopic techniques, photoreflectance (PR), photoluminescence (PL) and ellipsometry. PR analysis details both band structure and interfacial electric field data for both the GaAs collector and InGaP emitter regions. Including sub-lattice ordering for the InGaP alloy, the PR analysis also indicates the presence of an interfacial or intermixing layer between the emitter and GaAs base as a result of non-optimal MOVPE growth. The results are compared with room temperature PL spectra, demonstrating in particular the modification to the PL lineshape arising from the InGaP/GaAs interfacial conditions. The experimental data are also supported with finite-element device simulation, showing the effect of mixing layers on the interfacial band potentials. To interpret the experimental HBT ellipsometric response it was found necessary to include InGaP/GaAs layer intermixing within the optical model, consistent with the previous data. The implications of these results for HBT device performance are also discussed.
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