Abstract
InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is demonstrated that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10° off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density (Jpeak) at higher concentration ratios (185×) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 6° off GaAs substrates. Furthermore, the cell design with P++-AlGaAs/N++-GaAs TDs grown on 10° off GaAs substrates does not generate a disordered InGaP epitaxial layer during material growth, and thus shows superior current–voltage characteristics.
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