Abstract
Here, we report InGaN/AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using distributed Bragg reflectors (DBRs). The DBRs consist of 11 layers of alternating quarter-wave thickness Ti3O5 and Al2O3 deposited onto the indium–tin-oxide ohmic contact layer of a 385 nm UV LED by ion-assisted electron beam evaporation. Numerical calculations showed that the angle averaged reflectivity of the GaN/DBR structure at 385 nm was 12% higher than that of a conventional GaN/Ag structure. The measured light output–current–voltage of the DBR UV LEDs at 20 mA current injection showed an increase of 15% in output power in comparison to a conventional Ag reflector with no degradation in electrical properties. We attributed this light output enhancement to the increased light extraction from the higher DBR reflectivity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
