InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy

Abstract

The latest results from MBE-grown InGaN multiple quantum well laser diodes and light emitting diodes are presented. The laser diodes were grown on free-standing n-type GaN substrates and fabricated into index guided structures with a ridge width of 3.6 and 1000 μm cavity length. Laser operation occurred at room temperature under pulsed current injection up to a 10% duty cycle. A typical best threshold current density of 7 kA cm −2 and as operating voltage of 10 V was achieved. Light emitting diodes were grown on silicon-doped GaN template substrates and fabricated into 1 mm 2 header mounted, non-encapsulated chips. At 20 mA dc current operation, an output power of 3 mW was measured. A peak power of 10 mW was achieved at 90 mA before thermal rollover occurred. The lasers and light emitting diodes emitted in the wavelength range 390–410 nm.