Abstract
We demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts and textured Ga-doped ZnO (GZO) contact layer to serve as the n- and p-type electrode pads, respectively. Compared with the conventional LEDs with flat surface and Cr/Au metal contacts, the nonalloyed Ag/Cr/Au contacts used in the present experimental LEDs play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads. Enhancement of light output power observed from the experimental LEDs is also due to the textured GZO layer that can disperse the angular distribution of photons at the GZO/air interface. With an injection current of 20 mA, the output power of experimental LEDs can be improved markedly by a magnitude of 30% compared with conventional GaN-based LEDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
