Abstract
We report on InGaAsP/InP mushroom stripe lasers, for which a technique has been developed to precisely control the width of the active layer. Both p-substrate upside up mounted and n-substrate upside down mounted devices were fabricated. The lasers emit at λ=1.3 µm having a CW threshold as low as 18 mA, an external differential efficiency of up to 0.30 W/A at 200°C and a characteristic temperature T0=65 K. An output CW power in the fundamental transverse mode of 18 mW/mirror was obtained for upside up mounting. A 960 Mbit/sec RZ modulation is demonstrated.
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