InGaAs-GaAs-AlGaAs strained-layer quantum well lasers by metal-organic chemical vapour deposition

Abstract

The structure and characteristics of low threshold long wavelength ( lambda >1.07 mu m) strained-layer InGaAs-GaAs-AlGaAs quantum well broad area lasers and, in particular, buried heterostructure strained-layer lasers formed by wet chemical etching and a two-step metal-organic chemical vapour deposition growth process are reviewed. Low aluminium composition confining layers allow for high-quality regrowth interfaces and effective use of a silicon dioxide mask for selective epitaxy. The buried heterostructure lasers reported have narrow active region stripe widths, low threshold currents, high output powers, and operate on a stable fundamental lateral mode.