Abstract
A very low threshold current density of 400 A/cm2 was obtained in a 1.5 μm GaInAs/AlGaInAs compressive strained-layer quantum well laser diode, grown by metal organic chemical vapour deposition (MOCVD), with continuously graded-index separate-confinement-heterostructure. A very low threshold current of 3.6 mA was achieved in a high reflective coated 130μm long buried heterostructure laser diode with MOCVD grown semi-insulating current blocking layer. The lasing wavelength was 1.48 μm.
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