Abstract
It is reported that excellent device performance and uniformity can be achieved with 0.25- mu m gate InGaAs MESFET fabricated by the mixed manufacturing technology of metalorganic chemical vapor deposition (MOCVD) and ion implantation. An average unity gain cutoff frequency of 102 GHz with a standard deviation of 12 GHz is derived from the S-parameter measurements of 139 devices uniformly distributed on a 3-in-diameter GaAs wafer. Two-stage low-noise amplifiers fabricated by using these InGaAs MESFETs demonstrate a typical noise figure of 3.6 dB with an associated gain of 14.4 dB at 44 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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