Abstract
A high-performance terahertz InP Schottky Barrier Diode (SBD) with a submicron T-shaped contact structure featuring a high theoretical cut-off frequency of 9.0 THz is reported in this paper. The Schottky contact with a minimum diameter of 0.2 μm was achieved by photoresist laminate and gradient exposure process, exhibiting a minimum zero-bias junction capacitance is 0.15 fF. The quality of Schottky contact was improved by surface treatment of particles and high-temperature passivation of the edge with a polymer film, with an ideal factor of between 1.2 and 1.4. The high-frequency performance of the diode is further improved due to the small parasitic capacitance contributed by the polymer film dielectric bridge. The terahertz monolithic integration circuit based on this T-shaped contact submicron Schottky has better performance in reducing the circuit dielectric loss, exhibiting a remarkable potential for high-frequency applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
