Abstract
For fabricating high cutoff and high reliability GaAs Schottky barrier diodes, a method forming Schottky barrier by electroplating a Ni-Pd binary alloy on GaAs has been developed. This process enables to form Schottky barrier without stray capacitance due to overlay and without increase of series resistance due to oxidation and contamination of the GaAs surface. A high cutoff frequency more than 2000 GHz was realized. The Ni-Pd/GaAs Schottky barrier is stable and MTTF of 7.5×107 hours has been deduced at 60°C. Using these Schottky barrier diodes for a mixer in a SHF down-converter, conversion loss as low as 3.0 dB and system noise figure as low as 4.3 dB have been obtained with a 200 MHz band width at 12 GHz.
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