Abstract
In this paper, the InGaAs/InP separate absorption, grading, charge, and multiplication avalanche photodiode (SAGCM-APD) with a heterojunction multiplication layer and a hybrid absorption layer has been simulated. Due to the effect of the heterojunction multiplication layer on avalanche photodiode collision ionization, compared with the traditional structure, the break-down voltage and the punch-through voltage of the structure with a heterojunction multiplication layer was reduced by 2 V. By optimizing the thickness of the heterojunction multiplication layer, the electrical performance of the device has been enhanced. The avalanche gain was 193.37, which is much higher than the conventional structure (51.65). Besides, the thickness of InP in the heterojunction multiplication layer affects the capacitance characteristics of the device.
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