Abstract
Strain-compensated layers in photovoltaic devices can yield unique advantages as the absorption threshold can be extended towards longer wavelengths beyond that of the lattice-matched material, which is particularly important for thermophotovoltaic (TPV) applications. In such a nanostructure, where InGaAs barriers and InGaAs quantum wells of appropriate compositions are strain compensated on an InP substrate, the absorption of a quantum well cell (QWC) can be extended to ∼2 μm . Due to the higher band-gap barriers, the dark current remains at a low level more appropriate to lattice-matched InGaAs. Great care has to be taken in design and growth to achieve a situation that is close to strain balance with zero stress. Results are presented on a strain-compensated QWC that absorbs out to 1.77 μm . Predictions show that strain-compensated InGaAs/InGaAs QWCs have superior performance when compared with bulk InGaAs on InP monolithic interconnected modules and GaSb TPV cells.
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