Abstract
For thermophotovoltaic (TPV) applications, there is considerable interest at present in extending the absorption to longer wavelengths for higher overall system efficiencies with lower temperature sources. With strain-balanced In/sub 1-x/Ga/sub x/As/In/sub 1-y/Ga/sub y/As (InP) quantum well cells (QWCs) the absorption can be extended, while retaining a low dark current. We present a strain-balanced In/sub 0.62/Ga/sub 0.38/As/In/sub 0.47/Ga/sub 0.53/As QWC, which extends the absorption edge beyond that of lattice-matched bulk InGaAs to about 1.8 /spl mu/m, which is similar to that of GaSb, while the dark current remains at a lower level. We can model the spectral response of InP-based-including strain-balanced-QWCs. Efficiencies for solar (AM1.5G), black-body spectra of 1500-3200 K and selective emitters are presented. Lattice-matched InGaAsP and strain-balanced InGaAs (InP) QWCs show superior performance when compared with bulk InGaAs monolithic interconnected modules and bulk GaSb TPV cells.
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