Abstract
In order to fabricate 940nm InGaAs/GaAsP/GaInP semiconductor lasers with non-absorbing window (NAW), the induced quantum well intermixing (QWI) is investigated using impurity free vacancy disordering (IFVD) method. Successful intermixing is obtained with 24nm bandgap blue shift between the window and gain regions. Under destructive testing conditions, the catastrophic optical damage (COD) power for the NAM LD is about 116% higher than the conventional LD.
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