Abstract
We have demonstrated photorefractive InGaAs/GaAs multiple-quantum-well devices in the quantum confined Stark geometry. A four-wave-mixing diffraction efficiency up to 0.3% is obtained at a wavelength of 949 nm. Proton implantation strongly reduces the maximum diffraction efficiency although it saturates the diffraction efficiency at smaller grating period comparing to as-grown device. We have also observed higher order diffractions. It is found that the space-charge field changes its pattern temporally from a sinusoidal pattern to a rectangular one with decreasing its modulation depth.
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