Abstract
AbstractThe Vapor Levitation Epitaxy (VLE) system utilizes quartz frits directly in front of the growth surface of the substrate. This impacts on both epitaxial layer thickness uniformity and compositional uniformity. The highly uniform layers achievable with the process have been described.In this paper we discuss the compositional uniformity of InGaAs epitaxial layers grown by the VLE process. The composition of the InGaAs is shown to vary with time during a growth run and across the wafer when using the same growth conditions as for an open tube halide system. This compositional variation occurs for InGaAs layers exceeding 1.5 μm in thickness. We show that with the proper gas phase composition, InGaAs epitaxial layers in excess of 5.0 μm thick can be grown with excellent compositional uniformity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
