Abstract
Constant composition InGaAsP and InGaAs epitaxial layers can be grown using the step-cooling technique. However, the requirement of a fixed growth temperature limits the maximum thickness that can be obtained. The thickness of InGaAsP (λg = 1.15 µm@#@), InGaAs (λg = 1.68 µm), and InP liquid phase epitaxial layers grown on (100) InP sub-strates by the step-cooling technique has been measured as a function of growth time. (λg is defined as the wave-length corresponding to the band gap of the epitaxial layer). For long growth times, the effect of the finite growth solution becomes important, and beyond a distinct growth time, constant composition growth can no longer be maintained. The maximum constant composition layer thick-ness obtainable is not severely restricted by the fixed growth temperature, and from the experimental results this maximum thickness can be estimated for any melt size.
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