Abstract
Noise characteristics of bow-tie InGaAs diodes in forward and backward directions were measured in frequency range from 10 Hz to 20 kHz at room temperature. It was found that the spectral density of voltage fluctuations changes with frequency approximately as 1/<i>f</i>, indicating that origin of noise is superposition of generation and recombination processes in defects of the structure. It was determined that the dependence of spectral density of current fluctuation on current in backward and forward directions at different frequencies exhibits asymmetry which reflects non-uniform electric field distribution within the structure. As both noise and sensitivity increase with bias current, optimal conditions for device operation are discussed.
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