Abstract
Abstract Infrared bolometry is demonstrated using broadband gold black absorbers positioned on micromachined AlGaAs membranes of high thermal resistance. With a cascade of 20 AlGaAs thermocouple, the radiation-induced temperature difference is measured. Black-body radiation in the range of 315–530 K is used to test the sensor and a sensitivity of R = 145 V W -1 and corresponding detectivity of D * = 4.1 × 10 7 cm Hz 1/2 W -1 are reached. The relatively simple technology that is compatible with MESFET technology results in thermopile sensors that are compared to similar sensors fabricated in polysilicon and BiSbTe technologies.
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