Abstract
We performed an infrared study on the highly n-type and semi-insulating GaN single crystals. We also studied epitaxial layers (homoepitaxy) grown on the ( 0 0 0 1 ̄ ) N and (0 0 0 1)Ga faces of these crystals. For the n-type GaN single crystals, we show that the ( 0 0 0 1 ̄ ) N faces always possess much higher free carrier concentration than the (0 0 0 1)Ga face. Moreover, infrared reflectivity of the layers deposited on both polarity of semi-insulating and highly conducting bulk GaN substrates shows that the incorporation of impurities (most probably oxygen and silicon) is systematically higher in the layers grown on the ( 0 0 0 1 ̄ ) N faces. These results clearly indicate that the growth of epitaxial layers on the bulk GaN substrates should be done on the (0 0 0 1)Ga faces of the GaN crystals.
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