Abstract
We report an original analysis method to model the p-polarized infrared reflectivity (IR) spectra of (GaAs)m/(AlAs)n superlattices (m=36, 4<n<7) grown on semi-insulating GaAs (100). In our fitting procedure, the first derivative of the IR spectrum was calculated numerically and the respective dielectric functions of the AlAs barriers and GaAs quantum wells were described by two independent factorized models, with the thickness of the AlAs layers treated as a free parameter. The longitudinal and transverse optical phonon frequencies of the GaAs layers were found to be independent of the AlAs layer thickness, while those of the AlAs layer decreased in accordance with theory and their linewidths increased with increasing confinement.
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