Infrared photothermal radiometry of deep subsurface defects in semiconductor materials

Abstract

Photothermal radiometry (PTR) signals obtained with a highly focused laser beam, were used to obtain amplitude and phase PTR two-dimensional and three-dimensional images of a high-resistivity Si wafer with a mechanical damage on the backsurface, probed from the front (intact) surface. The frequency chosen was 5 kHz, corresponding to an optimal phase resolution of the defect. It is shown that the position of the underlying damage is well resolved in both images, with the phase image showing the expected higher sensitivity in terms of a greater extent of the damage region compared to the amplitude image. The results indicate that the change in carrier lifetime is the major contrast mechanism which can thus be calibrated and labeled as a free-carrier recombination lifetime image (under the same surface recombination conditions).