Abstract
Using a double-modulation, infrared photoluminescence technique, the authors have examined a variety of long-wavelength, HgCdTe materials under development for focal-plane array applications. Near-bandgap photoluminescence was easily observed in 'good quality' HgCdTe at 77 K, and they demonstrate the feasibility of using this technique for routine characterization of HgCdTe prior to device processing. Information regarding minority carrier lifetime, compositional uniformity, and native defects is obtained from photoluminescence data.
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