Abstract
The cover shows the extrinsic photoconduction induced Ge-based polarization-sensitive photodetector. The structure of the Ge-based photodetector is shown in the upper left corner. The amplified crystal structure of GeSe with several Ge vacancies is shown in the middle. Additionally, the image of excess carriers being excited by a polarized light is shown in the lower right corner. In article number 2006765, Qing Li, Zhongming Wei, Weida Hu, and co-workers investigate the extrinsic photoconduction effect in 2D materials for the first time and provide a strategy to broaden the detection waveband of photodetectors.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
