Abstract
Infrared light switching was achieved by using the infrared absorption due to the optically excited carriers in a semiconductor. A Nd:YAG laser pulse was used as a gate signal for excitation. A Si wafer was chosen as a switching element, since its band-gap energy coincides with the photon energy of the Nd:YAG laser. The intensity of incandescent infrared radiation was controlled by inducing free-carrier absorption in the Si wafer.
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