Abstract
Infrared (IR) camouflage materials are widely used to realize thermal camouflage by adjusting the IR emissivity (ε) of the target object. However, ε modulation without an external energy supply is still a great challenge. Self-regulating VO2 films with different IR emission properties are investigated by adjusting the oxygen flow ratio (O2%) and film thickness. The ε of VO2 films changes before and after the phase transition, and the Δε (the difference of ε before and after the phase transition) of films is different under different O2%, and the maximum Δε can reach 0.49. In addition, the difference temperature (ΔTIR) between the actual temperature (TA: the surface temperature of a standard silicon wafer measured by IR camera, which represents the actual temperature of VO2 samples.) and the IR trapping temperature (TIR: the temperature of VO2 samples measured by IR camera.) is greater than 35 °C after the phase transition. With the range of 1.6 %–2.2 % O2, the IR emission transition temperature (Tε-MIT) and hysteretic width (ΔTε-MIT) increase with increasing O2%. The thickness of the VO2 film affects the IR emission characteristics. The VO2 film is suitable for thermal camouflage materials and for IR anticounterfeiting.
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