Abstract
The infrared divergence response theory is applied to reorientational relaxation process of Al3+-hole in α-quartz containing Al impurity to study the behaviour of low temperature dielectric relaxation loss properties in this system. Our calculation results showed that the single phononassisted tunneling process makes the main contribution to the dielectric loss for T10 K, the thermally activated relaxation process dominates the dielectric loss; as for 6.5 K < T<10 K, the dielectric loss is the superposition of the two relaxation process. It is pointed out that for the same relaxation unit, different relaxation process may have different infrared divergence response. The ultrasonic relaxation loss properties induced by the same relaxation unit is also discussed.
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