Abstract
Radiation induced complexes in low carbon concentration, low electron dose Czochralski silicon crystal are examined by infrared absorption spectroscopy. By using the highly sensitive, highly accurate measurement and arithmetic procedures, carbon-oxygen(-self interstitial) and vacancy- oxygen complexes are detected in samples with carbon concentration about 1x1016 atoms/cm3 and electron dose about 1x1015-16 atoms/cm2. Also, their concentrations are determined with estimated accuracy within a factor of two. It is shown that the complex concentration is proportional to the dose. Secondary defect formation is suppressed in such low carbon concentration and low dose samples. Quantitative analysis in high quality samples will provide important information on defect behavior in irradiated crystals.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
