Abstract
Radiation induced complexes in low carbon concentration, low electron dose Czochralski silicon crystal are examined by infrared absorption spectroscopy. By using the highly sensitive, highly accurate measurement and arithmetic procedures, carbon-oxygen(-self interstitial)and vacancy-oxygen complexes are detected in samples with carbon concentration about 1x1016 atoms/cm3 and electron dose about 1x1016 atoms/cm2. Also, their concentrations, are estimated by evaluating the relative oscillator strength. Quantitative analysis in high quality samples will provide important information on defect behavior in irradiated crystals.
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