Abstract
Low temperature Fourier transform infrared (FTIR) spectroscopic studies have been performed on hydrogenated silicon nitride films grown on silicon substrate by plasma enhanced chemical vapour deposition (PECVD) technique. Different modes of vibrations pertaining to NH, SiH, Si:N, etc. molecular groups in the film are observed. It is found that the NH stretching mode which is not observable at ambient temperature, becomes a strong band at low temperatures. The broad band in the region 1100-700 cm -1 is found to comprise of three bands overlapping each other and arising from different molecular groups. The Si-N breathing mode is observed as a doublet near 420 cm -1 at different low temperatures. The hydrogenation of the film is determined from the SiH absorption band.
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