Abstract
To control the crystal diameter during Czochralski growth of silicon a new technique, based on auxiliary heating of the melt surface, has been tested. The experiments have been performed in a system used to grow 3 inch diameter silicon crystals. Two crystals have been grown with constant pull rates, the diameter being adjusted by the new technique. A third crystal was grown with the normal automatic diameter control system activated simultaneously with auxiliary heating of the melt surface. It was concluded that the proposed technique was feasible for diameter control, and that the microscopic homogeneity could be improved. Macroscopic dopant profiles were affected by large changes of the heater power, indicating that convection in the system could be influenced.
Published Version
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